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july 2006 rev 1 1/12 12 STS4DNFS30 n-channel - 30v - 0.044 ? - 4.5a so-8 stripfet? power mosfet plus schottky rectifier general features description this product associates the latest low voltage stripfet? in n-channel version to a low drop schottky diode. such configuration is extremely versatile in implementing a large variety of dc-dc converters for printers, portable equipment. applications switching application internal schematic diagram type v dss r ds(on) i d STS4DNFS30 30v <0.055 ? 4.5a schottky i f(av) v rrm v f(max) 4.5a 30v 0.53v so-8 www.st.com order codes part number marking package packaging STS4DNFS30 s4dnfs30 so-8 tape & reel
contents STS4DNFS30 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STS4DNFS30 electrical ratings 3/12 1 electrical ratings table 1. mosfet absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 4.5 a i d drain current (continuous) at t c = 100c 3.2 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 13 a p tot total dissipation at t c = 25c 2 w table 2. schottky absolute maximum ratings symbol parameter value unit v rrm repetitive peak reverse voltage 30 v i f(rms) rms forward current 10 a i f(av) average forward current t l =125c =0.5 4a i fsm surge non repetitive forward current tp=10ms sinusoidal 75 a i rrm repetitive peak reverse current tp=2s f=1khz 1a i rsm non repetitive peak reverse current tp=100s 1 a dv/dt critical rate of rise of reverse voltage 10000 v/s table 3. thermal data symbol parameter value unit rthj-amb thermal resistance junction-amb mosfet (1) 1. mounted on fr-4 board (steady state) 62.5 c/w t stg storage temperature range max -55 to 150 c t j junction temperature -55 to 150 c
electrical characteristics STS4DNFS30 4/12 2 electrical characteristics (tcase =25c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1 v r ds(on) static drain-source on resistance v gs = 10v, i d = 2a v gs = 5v, i d = 2a 0.044 0.055 0.085 ? ? table 5. static symbol parameter test conditions min. typ. max. unit i r (1) 1. pulse test: tp=380s, < 2%. to evaluate the conduction losses use the following equation: reverse leakage current t j = 25c t j = 100c v r = v rrm 6 200 15 a ma v f (1) zero gate voltage drain current (v gs = 0) t j = 25c t j = 125c i f = 2a 0.325 0.45 0.375 v v t j = 25c t j = 125c i f = 4a 0.43 0.53 0.51 v v table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds =10v, i d =2a 5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 330 115 28 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15v, i d = 4.5a, v gs = 5v (see figure 13 ) 4.7 1.2 2.1 nc nc nc p0.24i fav () 0.068i f 2 rms () + =
STS4DNFS30 electrical characteristics 5/12 table 7. switching times symbol parameter test cond itions min. typ. max unit t d(on) t r turn-on delay time rise time v dd = 15v, i d = 2a, r g = 4.7 ?, v gs = 5v (see figure 12 ) 9 17 ns ns t d(off) t f turn-off delay time fall time v dd = 15v, i d = 2a, r g = 4.7 ?, v gs = 5v (see figure 12 ) 15 6 ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 4.5 13 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 4.5a, v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4.5a, di/dt = 100a/s v dd = 15v, t j = 150c (see figure 17 ) 22 14.3 1.3 ns nc a
electrical characteristics STS4DNFS30 6/12 2.1 electrical characterist ics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. source-drain diode forward characteristics figure 6. static drain-source on resistance
STS4DNFS30 electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. normalized bv dss voltage vs temperature
test circuits STS4DNFS30 8/12 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
STS4DNFS30 package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STS4DNFS30 10/12 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) so-8 mechanical data
STS4DNFS30 revision history 11/12 5 revision history table 9. revision history date revision changes 19-jul-2005 1 first release
STS4DNFS30 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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